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Diffusion in Semiconductors 1998th ed.(Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology

Allen, C.E., Beke, D.L., Bracht, H., Bruff, C.M., Dutt, M.B., Erdelyi, G., Gas, P., d'Heurle, F.M., Murch, G.E., Seebauer, E.G., Sharma, B.L., Stolwijk, N.A. 　他

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発行年月	1998年03月
出版社／提供元	Springer-Verlag GmbH
出版国	ドイツ
言語	英語
媒体	冊子
装丁	hardcover
ページ数／巻数	XIII, 476 p. With CD-ROM.
ジャンル	洋書／理工学／物理学／物性物理学
ISBN	9783540609643
商品コード	0209705011
本の性格	学術書
商品URL	https://kw.maruzen.co.jp/ims/itemDetail.html?itmCd=0209705011

内容

Subvolume A of two subvolumes on Diffusion in Semiconductors and Non-Metallic Solids consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.

From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion

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